Search results for "Thermal annealing"

showing 6 items of 6 documents

Quantum well intermixing in GaInNAs/GaAs structures

2003

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. …

:Science::Physics::Optics and light [DRNTU]Materials sciencePhotoluminescencebusiness.industryAlloyGeneral Physics and Astronomyengineering.materialSettore ING-INF/01 - ElettronicaBlueshiftGallium arsenidechemistry.chemical_compoundchemistrySputteringQuantum well intermixing GaInNAsengineeringOptoelectronicsRapid thermal annealingbusinessSaturation (magnetic)Quantum well
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Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors

2004

We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…

:Science::Physics::Optics and light [DRNTU]PhotoluminescenceMaterials scienceCondensed Matter::Otherbusiness.industrychemical beamPhysics::OpticsGeneral Physics and AstronomyNonlinear opticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectDistributed Bragg reflectorBlueshiftGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryOptoelectronicsSemiconducting galliumRapid thermal annealingbusinessSemiconductor quantum wellsRefractive indexQuantum wellJournal of Applied Physics
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The effect of annealing temperature and time on synthesis of graphene thin films by rapid thermal annealing

2015

In this paper, we performed synthesis of graphene thin films by rapid thermal annealing (RTA) of thin nickel copper (Ni/Cu) layers deposited on spectroscopic graphite as a carbon source. Furthermore, we investigated the effect of annealing temperature and annealing time on formation and quality of synthesized graphene films. Raman spectroscopy study showed that annealing at lower temperatures results in formation of monolayer graphene films, while annealing at higher temperatures results in formation of multilayer graphene films. We used Raman mapping to determine the distribution of graphene sheets. Surface morphology of graphene thin films was investigated by atomic force microscopy and s…

Materials scienceThin films.Annealing (metallurgy)Scanning electron microscopeThin filmsvirusesAnalytical chemistry02 engineering and technology010402 general chemistry01 natural scienceslaw.inventionsymbols.namesakelawMaterials ChemistryGraphiteThin filmGraphene; Graphite; Rapid thermal annealing; Thin films.Graphene oxide paperRapid thermal annealingGrapheneMechanical EngineeringMetals and Alloys021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesElectronic Optical and Magnetic MaterialsChemical engineeringMechanics of MaterialssymbolsGraphiteGraphene0210 nano-technologyRaman spectroscopyGraphene nanoribbonsSynthetic Metals
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Thermal annealing and transformation of dimer F centers in neutron-irradiated Al2O3 single crystals

2020

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. In addition, the research leading to these results has received funding from the Estonian Research Council grant (PUT PRG619).

Nuclear and High Energy PhysicsDimer F-type centersMaterials scienceα-Al2O3DimerAnalytical chemistryCorundum02 engineering and technologyengineering.material01 natural sciencesFluence010305 fluids & plasmaschemistry.chemical_compound0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials ScienceNeutronIrradiationThermal annealingIrradiation by fast neutrons021001 nanoscience & nanotechnologyNeutron temperatureRadiation induced optical absorptionNuclear Energy and EngineeringchemistryengineeringAbsorption (chemistry)0210 nano-technologyLuminescenceJournal of Nuclear Materials
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Effect of thermal annealing on the luminescence of defective ZnO nanoparticles synthesized by pulsed laser ablation in water

2016

This work concerns ZnO nanoparticles (NPs), with sizes of tens of nm, produced by ablation with a pulsed Nd:YAG laser of a Zn plate in H2O. TEM images evidence the formation of nanoparticles with sizes of tens of nm. Moreover, HRTEM images and Raman spectra show that the distance between the crystalline planes and the vibrational modes are consistent with ZnO nanocrystal in wurtzite structure. Their optical properties are characterized by two emission bands both excited above the energy gap (3.4 eV): the first at 3.3 eV is associated with excitons recombination, the second at 2.2 eV is proposed to originate from a singly ionized oxygen vacancy. The green emission is independent of water pH,…

thermal annealingMaterials scienceLaser ablationPhotoluminescenceZnO nanoparticleBand gapAnalytical chemistryNanotechnology02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences0104 chemical sciencessymbols.namesakeNanocrystalsymbolslaser ablationoxygen vacanciephotoluminescence0210 nano-technologyHigh-resolution transmission electron microscopyRaman spectroscopyLuminescenceWurtzite crystal structure
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Applications of tunnel junctions in low-dimensional nanostructures

2009

This thesis concentrates on studies of AlOx based tunnel junctions and their feasibility for cooling, thermometry and strain sensing in suspended nanostructures. The main result of the thesis is cooling of one dimensional phonon modes of a suspended nanowire with normal metal insulator superconductor (NIS) tunnel junctions. Simultaneous cooling of both electrons and phonons was achieved, and the lowest phonon temperature reached in the system was 42 mK with an initial temperature of 100 mK. In addition, suspended devices show cooling still at a bath temperature of 600 mK. The observed thermal transport characteristics show, that the heat flow is limited by the scattering of phonons at the b…

thermal annealingtunnel junctionCondensed Matter::Materials ScienceSINIS refrigerationCondensed Matter::Superconductivitystrain sensingCondensed Matter::Mesoscopic Systems and Quantum Hall EffectSINIS thermometer
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